Maqola

Effect of diffusion and fluctuations in the nonequilibrium charge carrier density on the angular distribution of the output intensity for injection lasers based on an InAsSb/InAsSbP heterostructure

L. I. BurovBelorussian State University, 4 prosp. Nezavisimosti, Minsk, 220030, BelarusA. S. GorbatsevichBelorussian State University, 4 prosp. Nezavisimosti, Minsk, 220030, BelarusM. JadanTafila Technical University, College of Sciences, Applied Physics Department, Tafila, JordanV. V. SherstnevA. F. Ioffe Physicotechnical InstituteYu. P. YakovlevA. F. Ioffe Physicotechnical Institute

Journal of Applied Spectroscopyjournal2011en

Ochiq kirish: yoʻq

ABI

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Annotatsiya mavjud emas.

Mavzular

Semiconductor Quantum Structures and Devices Nonlinear Dynamics and Pattern Formation Semiconductor Lasers and Optical Devices

Identifikatorlar

DOI: 10.1007/s10812-011-9525-7

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