Near-threshold mode synchronization and Q switching in diode lasers with a fast saturated absorber
A. E. GubenkoA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgG. VenusA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgI. M. GadzhievA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgE. L. PortnoĭA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg,
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The near-threshold lasing regimes of AlGaAs lasers with an implanted saturated absorber under short pulsed pumping are investigated experimentally. A near-threshold modesynchronization regime is obtained.
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