E. L. Portnoĭ

5 ta ish

Fizika-Texnika Instituti

1. Low-temperature photoluminescence of heavy-ion-implanted InGaP solid solutions

   D. P. Bhattacharyya, D. A. Vinokurov, G.M. Gusinskii +6

   MaqolaIon-surface interactions and analysisTechnical Physics Letters19981 iqtibos

   ABIABI:AkademIndex/2026.other.452985

2. Phase effects in a semiconductor laser with diffraction extraction of radiation

   M. A. Kaliteevskiĭ, E. L. Portnoĭ, G. S. Sokolovskiĭ

   MaqolaStrong Light-Matter InteractionsTechnical Physics Letters19970 iqtibos

   ABIABI:AkademIndex/1997.article.000135

3. Q-switching in single-heterojunction lasers and generation of ultrahigh-power picosecond optical pulses

   G. Venus, I. M. Gadzhiev, A. Gubenko +2

   MaqolaLaser-Plasma Interactions and DiagnosticsTechnical Physics Letters19970 iqtibos

   ABIABI:AkademIndex/1997.article.000188

4. Near-threshold mode synchronization and Q switching in diode lasers with a fast saturated absorber

   A. E. Gubenko, G. Venus, I. M. Gadzhiev +1

   MaqolaOptical Network TechnologiesTechnical Physics Letters19990 iqtibos

   ABIABI:AkademIndex/1999.article.000093

5. Picosecond semiconductor lasers with a multisection saturable absorber, fabricated by heavy ion implantation

   G. Venus, I. M. Gadzhiev, A. E. Gubenko +2

   MaqolaAdvanced Fiber Laser TechnologiesTechnical Physics Letters19990 iqtibos

   ABIABI:AkademIndex/1999.article.000142