G. S. Sokolovskiĭ

5 ta ish

Fizika-Texnika Instituti

1. Polarization switching time for semiconductor laser radiation

   G. S. Sokolovskiĭ, A. G. Deryagin, V. I. Kuchinskiĭ

   MaqolaSemiconductor Lasers and Optical DevicesTechnical Physics Letters19970 iqtibos

   ABIABI:AkademIndex/1997.article.000114

2. Phase effects in a semiconductor laser with diffraction extraction of radiation

   M. A. Kaliteevskiĭ, E. L. Portnoĭ, G. S. Sokolovskiĭ

   MaqolaStrong Light-Matter InteractionsTechnical Physics Letters19970 iqtibos

   ABIABI:AkademIndex/1997.article.000135

3. Photoluminescence properties of AlxGa1−xAs epitaxial layers grown under conditions of ultrafast flux cooling

   А. В. Абрамов, A. G. Deryagin, N. G. Deryagin +5

   MaqolaSemiconductor Quantum Structures and DevicesTechnical Physics Letters19970 iqtibos

   ABIABI:AkademIndex/1997.article.000239

4. Properties of GaInAsSb solid solutions obtained from antimony fluxes by liquid-phase epitaxy in the spinodal decay region

   В. И. Васильев, A. G. Deryagin, V. I. Kuchinskiĭ +4

   MaqolaSemiconductor Quantum Structures and DevicesTechnical Physics Letters19980 iqtibos

   ABIABI:AkademIndex/1998.article.000172

5. Modulation of the polarization of semiconductor laser radiation at constant output power

   G. S. Sokolovskiĭ, A. G. Deryagin, V. I. Kuchinskiĭ

   MaqolaPhotonic and Optical DevicesTechnical Physics Letters19980 iqtibos

   ABIABI:AkademIndex/1998.article.000272