Phase effects in a semiconductor laser with diffraction extraction of radiation
M. A. KaliteevskiĭA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. PetersburgE. L. PortnoĭA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg,G. S. SokolovskiĭA. F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg,
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Phase effects arising in a semiconductor laser with diffraction extraction of radiation and a distributed Bragg reflector on the substrate side are taken into account exactly quantitatively and the possibilities of using these effects in lasers is analyzed. It is shown that the phase effects studied can be used to increase the laser efficiency substantially.
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