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Photodetectors based on osmium-doped silicon

Marat S. YunusovS. V. Starodubtsev Physicotechnical Institute, 700084, Tashkent, UzbekistanР. А. МуминовS. V. Starodubtsev Physicotechnical Institute, 700084, Tashkent, UzbekistanG. NurkuzievS. V. Starodubtsev Physicotechnical Institute, 700084, Tashkent, UzbekistanN. GapparovS. V. Starodubtsev Physicotechnical Institute, 700084, Tashkent, UzbekistanA. KholboevS. V. Starodubtsev Physicotechnical Institute, 700084, Tashkent, Uzbekistan

Semiconductorsjournal1999en

Ochiq kirish: yoʻq

ABI

Annotatsiya

Osmium-doped silicon photodetectors with a low control voltage have been constructed. The n-type Si was chosen as the initial material. The silicon was doped with osmium using a diffusion method. The characteristics of these structures are studied at 300 K.

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Mavzular

Photonic and Optical Devices Silicon Nanostructures and Photoluminescence Thin-Film Transistor Technologies

Identifikatorlar

DOI: 10.1134/1.1187916

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