On the stabilization of electrical properties of compensated silicon as a result of irradiation with 60Co gamma-ray quanta
Marat S. YunusovInstitute of Nuclear Physics, Academy of Sciences of Uzbekistan, Ulugbek, Tashkent, UzbekistanM. KarimovInstitute of Nuclear Physics, Academy of Sciences of Uzbekistan, Ulugbek, Tashkent, 702132, UzbekistanM. A. DzhalelovInstitute of Nuclear Physics, Academy of Sciences of Uzbekistan, Ulugbek, Tashkent, 702132, Uzbekistan
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A change in the charge-carrier concentration in compensated silicon (obtained by preliminary irradiation) as a result of gamma-ray irradiation was studied. It was found that the removal rate of charge carriers in compensated silicon is lower than in the reference sample. A new mechanism responsible for the immunity of electrical properties of compensated silicon to radiation is discussed.
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