The effect of external factors on photoelectric parameters of amorphous hydrogenated silicon in relation to the initial characteristics of the films
Н. Р. РахимовNamangan State University, Namangan (Uzbekistan)U. S. BabakhodzhaevNamangan State University, Namangan (Uzbekistan)Kh. Yu. MavlyanovNamangan State University, Namangan (Uzbekistan)Р. Г. ИкрамовNamangan State University, Namangan (Uzbekistan)
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ABI
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The effects of heat treatments in vacuum, implantation of Si+ ions, and exposure to light on photoelectric parameters of a-Si:H films were studied. It is shown that the initial characteristics of the films play the determining role in the crystallization effect and in the manifestation of the Staebler-Wronski effect.
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