Diffusion of ytterbium in silicon

D. É. NazyrovUlugbek National University of Uzbekistan, Tashkent, 700174, Uzbekistan

Semiconductorsjournal2003en

Ochiq kirish: yoʻq

ABI

Annotatsiya

Diffusion of ytterbium in silicon is studied by the direct method of radioactive isotopes in the temperature range of 1100–1250°C. Diffusion coefficients of ytterbium impurity in silicon are determined.

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Mavzular

Graphite, nuclear technology, radiation studies Silicon and Solar Cell Technologies Nuclear reactor physics and engineering

Identifikatorlar

DOI: 10.1134/1.1610112

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