The effect of γ-ray radiation on the characteristics of the interface between silicon and lead-borosilicate glass
П. Б. ПарчинскийNational University of Uzbekistan, Tashkent, 700174, UzbekistanС. И. ВласовNational University of Uzbekistan, Tashkent, 700174, UzbekistanAslan NasirovNational University of Uzbekistan, Tashkent, 700174, Uzbekistan
Ochiq kirish: yoʻq
ABI
Annotatsiya
The effect of γ-ray radiation on the density of surface states at the interface between silicon and lead-borosilicate glass is studied. It is established that, at radiation doses higher than 106 rad, a local peak in the surface-state density at E=E c −(0.32±0.04) eV is observed. It is shown that the interface between Si and lead-borosilicate glass is more resistant to irradiation with γ-ray photons than is the Si-SiO2 interface obtained by thermal oxidation of the silicon surface.
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