Study of current-voltage characteristics of Si-(Si 2 ) 1-x (GaAs) x grown on polycrystal silicon substrate by Liquid Phase Epitaxy method
A.S. SaidovА. КутлимратовБ. СапаевU. T. DavlatovPhysical-Technical Institute AS RU, Tashkent (Uzbekistan)
2004en
ABI
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