Diffusion of terbium in silicon

D. É. NazyrovUlugbek National University of Uzbekistan, Tashkent, 700174, Uzbekistan

Semiconductorsjournal2006en

Ochiq kirish: yoʻq

ABI

Annotatsiya

The diffusion of terbium in silicon in the temperature range of 1100–1250°C is studied using the direct radioisotope technique for the first time. The diffusion parameters of terbium in silicon are determined.

Hali tarjima qilinmagan

Mavzular

Graphite, nuclear technology, radiation studies Silicon and Solar Cell Technologies Semiconductor materials and interfaces

Identifikatorlar

DOI: 10.1134/s1063782606060029

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