Dynamics of the defects recharging in coarse-grained p-CdTe films
Kh. Kh. IsmailovPhysicotechnical Institute, Tashkent, 700084, UzbekistanZh. ZhanabergenovPhysicotechnical Institute, Tashkent, 700084, UzbekistanШ. А. МирсагатовPhysicotechnical Institute, Tashkent, 700084, UzbekistanSmagul KarazhanovPhysicotechnical Institute, Tashkent, 700084, Uzbekistan
Ochiq kirish: yoʻq
ABI
Annotatsiya
The capacitance-voltage characteristic of the MOS-structure based on the coarse-grained p-CdTe film is studied. The nonmonotonici character of the characteristic is attributed to the recharging of deep acceptor levels at the semiconductor-oxide interface and by the variation in the degree of compensation of surface states.
Hali tarjima qilinmagan
Mavzular
Identifikatorlar
Iqtiboslar va manbalar
0 ta iqtibos6 ta foydalanilgan manba