Ushbu ish iqtibos qilgan ishlar

7 ta ish

Ish: Influence of Ge content on formation of radiation defects in Si1−xGex solid solutions

1. Laterally-Graded SiGe Crystals for High Resolution Synchrotron Optics

   A. Erko, N. V. Abrosimov, V. Alex

   Maqola20026 iqtibos

   ABIABI:AkademIndex/2026.other.609957

2. Bulk Si1−xGex single- and poly-crystals: a new prospective material for electronics

   I. G. Atabaev

   MaqolaSemiconductor materials and interfacesComputational Materials Science20013 iqtibos

   ABIABI:AkademIndex/2001.article.000189

3. Implementation of Low Thermal Budget Techniques to Si and SiGe MOSFET Device Processing

   Michael Glück, J. Hersener, H.G. Umbach +2

   Maqola19972 iqtibos

   ABIABI:AkademIndex/2026.other.609962

4. Radiation Defects Formation in Si<Ge>

   Lyudmila I. Khirunenko, Yu.V. Pomozov, Mikhail G. Sosnin +3

   Maqola19992 iqtibos

   ABIABI:AkademIndex/2026.other.609963

5. Sarlavhasiz

   Boshqa2 iqtibos

   ABIABI:AkademIndex/2026.other.669481

6. Preparation and Thermoelectric Properties of Polycrystalline Si0.4Ge0.6

   I. G. Atabaev, N. A. Matchanov, É. N. Bakhranov +1

   MaqolaSemiconductor materials and interfacesInorganic Materials20051 iqtibos

   ABIABI:AkademIndex/2005.article.000180

7. Sarlavhasiz

   Boshqa1 iqtibos

   ABIABI:AkademIndex/2026.other.669482