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N. V. Abrosimov

6 ta ish

Leibniz Institute for Crystal Growth

AkademScholarda batafsil koʻrsatkichlar

  1. Laterally-Graded SiGe Crystals for High Resolution Synchrotron Optics

    A. Erko, N. V. Abrosimov, V. Alex

    Maqola20026 iqtibos
    ABI

  2. Radiation Defects Formation in Si<Ge>

    Lyudmila I. Khirunenko, Yu.V. Pomozov, Mikhail G. Sosnin +3

    Maqola19992 iqtibos
    ABI

  3. Dark properties and transient current response of Si0.95Ge0.05 n+p devices

    A. Ruzin, S. Marunko, N. V. Abrosimov +1

    Maqola20032 iqtibos
    ABI

  4. Positron probing of open vacancy volume of phosphorus‐vacancy complexes in float‐zone n‐type silicon irradiated by 0.9‐MeV electrons and by 15‐MeV protons

    N.Yu. Arutyunov, V. V. Emtsev, Mohamed Elsayed +4

    MaqolaMuon and positron interactions and applicationsPhysica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics20171 iqtibos
    ABI

  5. Positron probing of disordered regions in neutron‐irradiated silicon

    N.Yu. Arutyunov, Nick S. Bennett, Neil M. Wight +4

    MaqolaMuon and positron interactions and applicationsphysica status solidi (b)20161 iqtibos
    ABI

  6. SiGe Light-Emitting Diodes and Their Characteristics in the Region of Band-to-Band Transitions

    A. M. Emel’yanov, Н. А. Соболев, T. M. Mel’nikova +1

    MaqolaSilicon Nanostructures and PhotoluminescenceDiffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena20050 iqtibos
    ABI