Effect of ultrasonic treatment on the generation characteristics of a semiconductor-glass interface
С. И. ВласовNational University of Uzbekistan, Tashkent, UzbekistanA. V. OvsyannikovNational University of Uzbekistan, Tashkent, UzbekistanB. N. ZaveryukhinNational University of Uzbekistan, Tashkent, Uzbekistan
Ochiq kirish: yoʻq
ABI
Annotatsiya
It is demonstrated that the temporal variation of the rate of the surface generation of charge carriers at a semiconductor-glass interface can be determined by measuring the kinetics of capacitance relaxation in the semiconductor-glass-metal structure. Ultrasonic treatment of the semiconductor-glass interface decreases the absolute value of the surface generation rate and modifies its temporal dependence.
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