Ushbu ishga iqtibos qilgan ishlar

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Ish: Effect of ultrasonic treatment on the generation characteristics of a semiconductor-glass interface

1. Dependence of the surface generation velocity at silicon-(lead borosilicate) glass interface on conditions of nonequilibrium depletion region formation

   P. B. Parchinskiy, Aslan Nasirov, Л. Г. Лигай +2

   MaqolaMaterial Science and ThermodynamicsTechnical Physics Letters20110 iqtibos

   ABIABI:AkademIndex/2011.article.000305

2. Effect of electron injection on charge properties of lead-boron-silicate glass

   О. О. Маматкаримов, N. Yu. Sharibaev, A. A. Abdulkhayev +1

   MaqolaSemiconductor materials and interfacesAIP conference proceedings20250 iqtibos

   ABIABI:AkademIndex/2025.article.007475