Dependence of the surface generation velocity at silicon-(lead borosilicate) glass interface on conditions of nonequilibrium depletion region formation
P. B. ParchinskiyKarakalpak State University, Nukus, 742000, UzbekistanAslan NasirovNational University of Uzbekistan, Tashkent, 700174, UzbekistanЛ. Г. ЛигайNational University of Uzbekistan, Tashkent, 700174, UzbekistanМ. М. АлламбергеновKarakalpak State University, Nukus, 742000, UzbekistanК. А. ИсмайловKarakalpak State University, Nukus, 742000, Uzbekistan
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The generation characteristics of silicon-(lead borosilicate) glass interface have been studied by the method of isothermal capacitance transient spectroscopy in the metal-insulator-semiconductor (MIS) structure. It is established that the effective surface generation velocity depends on the amplitude of the inverting voltage pulse that drives the MIS structure out of the equilibrium state. The observed dependence may be caused by the injection of charge carriers through the silicon-glass interface followed by their localization on traps in the region of glass near the interface.
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