Positron probing of gamma-irradiated Ge doped with P, As, Sb, and Bi: Changes in atomic structures of defects due to n→p conversion
N.Yu. ArutyunovInstitute of Electronics, UAS, 700170 Tashkent, UzbekistanV. V. EmtsevIoffe Physicotechnical Institute, RAS, 194021 St. Petersburg, Russia
Ochiq kirish: yoʻq
ABI
Annotatsiya
Annotatsiya mavjud emas.
Mavzular
Identifikatorlar
Iqtiboslar va manbalar
0 ta iqtibos12 ta foydalanilgan manba