Ushbu ish iqtibos qilgan ishlar

3 ta ish

Ish: Measurement of efficient thickness of transition layer, stimulated by microwave radiation, in contacts Mo-GaAs

1. Physics of Semiconductor Devices

   Geoffrey Pridham

   Maqola197019 iqtibos

   ABIABI:AkademIndex/2026.other.390558

2. The Physics of Semiconductor Devices

   Kitob202414 iqtibos

   ABIABI:AkademIndex/2026.other.357508

3. Sarlavhasiz

   Boshqa1 iqtibos

   ABIABI:AkademIndex/2026.other.625471