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Anisotropy of the relaxation of the electron spin caused by competition of the Rashba and Dresselhaus mechanisms

A. M. SmirnovPhysicotechnical InstituteV. A. OseptsovaRussian Academy of SciencesА. В. ПлатоновIoffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194054, RussiaА. С. ГуревичIoffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194054, RussiaВ. П. КочерешкоIoffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194054, RussiaA. S. ShkolnikIoffe Physicotechnical Institute, Russian Academy of Sciences, St. Petersburg, 194054, RussiaV. P. EvtikhievPhysicotechnical InstituteV. V. PetrovFock Institute of Physics, St. Petersburg State University, St. Petersburg, 198054, RussiaYu. K. DolgikhFock Institute of Physics, St. Petersburg State University, St. Petersburg, 198054, RussiaYu. P. EfimovFock Institute of Physics, St. Petersburg State University, St. Petersburg, 198054, RussiaS. A. EliseevFock Institute of Physics, St. Petersburg State University, St. Petersburg, 198054, Russia
Semiconductorsjournal2009en

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Anisotropy of the relaxation of electron spin in AlGaAs quantum wells with an asymmetric profile in the growth-axis direction is studied by the technique of optical orientation. It is demonstrated that the difference between the Hanle curves for [110] and [1 $$ \bar 1 $$ 0] orientations does originate from the spin-relaxation anisotropy rather than the electron g-factor anisotropy. Contributions to the Hanle curves both from free and localized electrons, characterized by different lifetimes, are observed.

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