Growth and properties of single crystals of Si1 − x Ge x (0 < x < 0.35) solid solutions
I. G. AtabaevMichigan State UniversityN. A. MatchanovAcademy of Sciences of the Republic of UzbekistanM. U. KhazhievAcademy of Sciences of the Republic of UzbekistanSh. A. YusupovaAcademy of Sciences of the Republic of Uzbekistan
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Annotatsiya
Single-crystalline Si1 − x Ge x ingots with a germanium content of up to 35 at. %, a diameter of 10mm, and a length of up to 10 cm were grown using the crucibleless float-zone melting technique. The ingots had a homogeneous distribution of germanium and a low density of dislocations. The material was characterized with respect to the structure and electrical properties. The resistivity and the carrier lifetime, mobility, and concentration in Si1 − x Ge x single crystals have been studied as functions of the germanium content.
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