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Ish: Growth and properties of single crystals of Si1 − x Ge x (0 < x < 0.35) solid solutions

1. Investigation of Some Properties of Nickel Germanosilicides Formed on the Surface of Bulk Si1 – xGex Crystals

   N. A. Matchanov, K. A. Bobojonov

   MaqolaSemiconductor materials and interfacesApplied Solar Energy20220 iqtibos

   ABIABI:AkademIndex/2022.article.010466