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24 ta ish

Ish: Effect of Be codoping on the photoluminescence spectra of GaMnAs

  1. Physics of Semiconductor Devices

    J.-P. Colinge, Cindy Colinge

    Kitob200258 iqtibos
    ABI

  2. Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors

    T. Dietl, Hideo Ohno, F. Matsukura +2

    Maqola200018 iqtibos
    ABI

  3. Effect of the location of Mn sites in ferromagnetic<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi>−</mml:mi><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Mn</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mi mathvariant="normal">As</mml:mi></mml:math>on its Curie temperature

    K. M. Yu, W. Walukiewicz, T. Wójtowicz +4

    Maqola20025 iqtibos
    ABI

  4. Optical characterisation of MOVPE-grown Ga1−Mn As semimagnetic semiconductor layers

    Th. Hartmann, M. Lampalzer, W. Stolz +4

    Maqola20004 iqtibos
    ABI

  5. Hybrid ferromagnetic/semiconductor heterostructures for spintronics

    Nitin Samarth, Seung‐Hyun Chun, K. C. Ku +2

    Maqola20034 iqtibos
    ABI

  6. Metal–insulator transition and magnetotransport in III–V compound diluted magnetic semiconductors

    Y. Iye, A. Oiwa, Akira Endo +5

    Maqola19994 iqtibos
    ABI

  7. Effect of additional nonmagnetic acceptor doping on the resistivity peak and the Curie temperature of Ga1−xMnxAs epitaxial layers

    Sh. U. Yuldashev, Hyunsik Im, Vadim Sh. Yalishev +6

    MaqolaZnO doping and propertiesApplied Physics Letters20033 iqtibos
    ABI

  8. (Ga,Mn)As: A new diluted magnetic semiconductor based on GaAs

    Hiroshi Ohno, Aidong Shen, F. Matsukura +4

    Maqola19963 iqtibos
    ABI

  9. Manganese-related recombination centers in epitaxial GaAs grown from a bismuth melt

    К. С. Журавлев, Т. С. Шамирзаев, N. A. Yakusheva

    Maqola19983 iqtibos
    ABI

  10. Influence of manganese contamination on high-mobility GaAs∕AlGaAs heterostructures

    K. Wagenhuber, H.-P. Tranitz, M. Reinwald +1

    Maqola20043 iqtibos
    ABI

  11. Influence of manganese contamination on high-mobility GaAs/AlGaAs heterostructures

    K. Wagenhuber, H. -p. Tranitz, M. Reinwald +1

    Maqola20043 iqtibos
    ABI

  12. Effect of Be doping on the properties of GaMnAs ferromagnetic semiconductors

    Sang‐Hoon Lee, S. J. Chung, I. S. Choi +8

    Maqola20033 iqtibos
    ABI

  13. Magnetotransport properties of<i>p</i>-type (In,Mn)As diluted magnetic III-V semiconductors

    Hideo Ohno, H. Munekata, T. Penney +2

    Maqola19923 iqtibos
    ABI

  14. Optical characteristics of MBE grown GaMnAs embedded with MnAs clusters

    P. B. Parchinskiy, Fu Yu, Se Young Jeong +4

    MaqolaZnO doping and propertiesApplied Surface Science20062 iqtibos
    ABI

  15. Study of photoluminescence spectra of GaMnAs produced by low-temperature molecular beam epitaxy

    P. B. Parchinskiy, A. Yu. Bobylev, С. И. Власов +2

    MaqolaZnO doping and propertiesSemiconductors20072 iqtibos
    ABI

  16. Spatially separated Mn and Be doping for high hole concentration in GaMnAs by using MEE

    Koji Onomitsu, Hideo Fukui, Takashi Maeda +2

    Maqola20052 iqtibos
    ABI

  17. Photoconductivity and <i>n</i>- to <i>p</i>-type transition in silicon planar-doped GaAs structures with a doped cap layer

    A. G. de Oliveira, G. M. Ribeiro, D. A. W. Soares +3

    Maqola19952 iqtibos
    ABI

  18. Sarlavhasiz

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    ABI

  19. Sarlavhasiz

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  20. Sarlavhasiz

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  21. Sarlavhasiz

    Boshqa1 iqtibos
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  22. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  23. Sarlavhasiz

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  24. Sarlavhasiz

    Boshqa1 iqtibos
    ABI