Photosensitivity of polycrystalline silicon fabricated by fivefold remelting of metallurgical silicon in a solar furnace and n-p structures made of this material

The spectral photosensitivity of polycrystalline silicon fabricated by fivefold remelting of metallurgical silicon in an outdoor solar furnace is investigated. It is found that a structure made of this material with two simple ohmic contacts possesses a voltaic photosensitivity in the IR range of the spectrum (0.3–1.0 eV). More-over, a structure made of this material by the diffusion of boron with an n-p transition also has an IR spectral sensitivity over a large range (0.3–1.8 eV).

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