Maqola

Characterization of the three-dimensional residual stress distribution in SiC bulk crystals by neutron diffraction

Xuejian XieJinanXiaobo HuChinaXiufang ChenCollaborative Innovation Center for Global Energy Interconnection (Shandong)Fafu LiuJinanXianglong YangCollaborative Innovation Center for Global Energy Interconnection (Shandong)Xiangang XuJinanHongfei WangChinaJian LiKey Laboratory of Neutron Physics and Institute of Nuclear Physics and ChemistryPeng YuCollaborative Innovation Center for Global Energy Interconnection (Shandong)Ruiqi WangCollaborative Innovation Center for Global Energy Interconnection (Shandong)

CrystEngCommjournal2017en

Ochiq kirish: yoʻq

ABI

Annotatsiya

The neutron diffraction method was adopted to study the three-dimensional residual stress distribution in SiC bulk crystals for the first time.

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Mavzular

Advanced ceramic materials synthesis Aluminum Alloys Composites Properties Silicon Carbide Semiconductor Technologies

Identifikatorlar

DOI: 10.1039/c7ce01552f

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