Area-selective Ru ALD by amorphous carbon modification using H plasma: from atomistic modeling to full wafer process integration
Ivan ZyulkovB-3001 LeuvenЕ. Н. ВоронинаFaculty of PhysicsMikhail KrishtabB-3001 LeuvenD. G. VoloshinLeninskie GoryBoon Teik ChanB-3001 LeuvenYu. A. MankelevichGSP-1Т. В. РахимоваGSP-1Silvia ArminiB-3001 LeuvenStefan De GendtBelgium
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Selective ALD of Ru on Si-based materials with simultaneous ALD inhibition on the amorphous carbon surface enabled by remote H plasma.
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