Е. Н. Воронина

1 ta ish

Moscow State University

1. Area-selective Ru ALD by amorphous carbon modification using H plasma: from atomistic modeling to full wafer process integration

   Ivan Zyulkov, Е. Н. Воронина, Mikhail Krishtab +6

   MaqolaOAOchiq kirishSemiconductor materials and devicesMaterials Advances20200 iqtibos

   ABIABI:AkademIndex/2020.article.000426