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Ish: Physical Processes during the Formation of Silicon-Lithium p-i-n Structures Using Double-Sided Diffusion and Drift Methods

1. Optimal regime of the double-sided drift of lithium ions into silicon monocrystal

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2. Equivalent circuit of a silicon–lithium p–i–n nuclear radiation detector

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   ABIABI:AkademIndex/2023.article.009538

3. Obtaining Silicon Specimens with Different Crystallographic Orientations by Diffusion Doping with Manganese Atoms

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   ABIABI:AkademIndex/2026.article.053431