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16 ta ish

Ish: The Effect of Stepwise Postimplantation Annealing on the Composition and Structure of Silicon Surface Layers Implanted with Alkali Metal Ions

  1. Formation of nanodimensional structures on surfaces of GaAs and Si by means of ion implantation

    S. B. Donaev, Flyura Djurabekova, Д. А. Ташмухамедова +1

    MaqolaIon-surface interactions and analysisPhysica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics201421 iqtibos
    ABI

  2. Optimum ion implantation and annealing conditions for stimulating secondary negative ion emission

    З. А. Исаханов, Z. E. Mukhtarov, Б. Е. Умирзаков +1

    MaqolaIon-surface interactions and analysisTechnical Physics201120 iqtibos
    ABI

  3. Electronic structure and optical properties of CaF2 films under low energy Ba+ ion-implantation combined with annealing

    Б. Е. Умирзаков, T.S. Pugacheva, A.T. Tashatov +1

    MaqolaInorganic Fluorides and Related CompoundsNuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms200016 iqtibos
    ABI

  4. Structure and electronic properties of nanoscale phases and nanofilms of metal silicides produced by ion implantation in combination with annealing

    Kh. Kh. Boltaev, Д. А. Ташмухамедова, Б. Е. Умирзаков

    MaqolaSemiconductor materials and interfacesJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201414 iqtibos
    ABI

  5. Features of CoSi2 phase formation by two-stage rapid thermal annealing of Ti/Co/Ti/Si(100) structures

    V. I. Rudakov, Yu. I. Denisenko, В. В. Наумов +1

    Maqola201110 iqtibos
    ABI

  6. Molecular Beam Epitaxy and Heterostructures

    Leroy L. Chang, K. H. Ploog

    KitobOchiq kirish19859 iqtibos
    ABI

  7. Variation of the Crystal Structure on Si(111) Surface Induced by Ion Bombardment and Subsequent Annealing

    Samad Nimatov, Б. Е. Умирзаков, F. Ya. Khudaikulov +1

    MaqolaIon-surface interactions and analysisTechnical Physics20198 iqtibos
    ABI

  8. The Effect of the Formation of Silicides on the Resistivity of Silicon

    Б. Е. Умирзаков, Д. А. Ташмухамедова, G. Kh. Allayarova +1

    MaqolaSemiconductor materials and interfacesTechnical Physics Letters20195 iqtibos
    ABI

  9. Nanodimensional CoSiO Films Obtained by Ion Implantation on a CoSi2 Surface

    S. B. Donaev

    MaqolaSemiconductor materials and devicesTechnical Physics Letters20204 iqtibos
    ABI

  10. Ion-beam-induced amorphization and recrystallization in silicon

    Lourdes Pelaz, Luis A. Marqués, J. Barbolla

    Maqola20043 iqtibos
    ABI

  11. Semiconductor lasers with internal wavelength selection

    V. V. Zolotarev, A. Yu. Leshko, A. V. Lyutetskiĭ +10

    Maqola20133 iqtibos
    ABI

  12. Theory of electronic structure evolution in GaAsN and GaPN alloys

    Paul R. C. Kent, Alex Zunger

    Maqola20013 iqtibos
    ABI

  13. Solar cell efficiency tables (version 49)

    Martin A. Green, Keith Emery, Yoshihiro Hishikawa +4

    Maqola20163 iqtibos
    ABI

  14. A Lightweight Flexible Solar Cell Based on a Heteroepitaxial InGaP/GaAs Structure

    М. А. Putyato, N. A. Valisheva, М. О. Петрушков +8

    Maqola20193 iqtibos
    ABI

  15. Electronic Structure of Single-Crystal CaF<sub>2</sub>(111) with Nanoscale Phases of Ca and Si

    Yokub Suvonovich Ergahov, B. Umirzakov, Gulmira Khalmuratovna Allayarova

    MaqolaOchiq kirishnanoparticles nucleation surface interactionsMaterials Sciences and Applications20181 iqtibos
    ABI

  16. Sarlavhasiz

    Boshqa1 iqtibos
    ABI