Ushbu ishga iqtibos qilgan ishlar

4 ta ish

Ish: Structure, Morphology and Photoelectric Properties of n-GaAs--p-(GaAs)1--x(Ge2)х Heterostructure

1. Photoelectric Characteristics of the Heterojunction n-GaAs-p-(GaAs)1-x-y(Ge2)x(ZnSe)y

   Akramjon Y. Boboev

   MaqolaOAOchiq kirishSemiconductor Quantum Structures and DevicesEast European Journal of Physics20241 iqtibos

   ABIABI:AkademIndex/2026.other.467189

2. Growth of Solid Solutions (Ge2)1−x−y(GaAs1−δBiδ)x(ZnSe)y on Silicon Sub-strates by Liquid Phase Epitaxy

   Akramjon Y. Boboev, Ulugbek. R. Karimberdiev, Sardor R. Kadirov +1

   MaqolaOAOchiq kirish20251 iqtibos

   ABIABI:AkademIndex/2026.other.967969

3. The Mechanism of Current Transfer in n-GaAs – p(ZnSe)1-x-y(Ge2)x(GaAs1–δBiδ)y Heterostructures

   С. З. Зайнабидинов, Khotamjon J. Mansurov, Akramjon Y. Boboev +1

   MaqolaOAOchiq kirishSemiconductor materials and interfacesEast European Journal of Physics20240 iqtibos

   ABIABI:AkademIndex/2024.article.008697

4. Investigation of Volt-Ampere Characteristics of a Gas Sensitive Sensor Based on Tin Dioxide

   С. З. Зайнабидинов, Akramjon Y. Boboev, Nuritdin Y. Yunusaliyev +2

   MaqolaOAOchiq kirish20240 iqtibos

   ABIABI:AkademIndex/2024.article.040542