Ushbu ishga iqtibos qilgan ishlar

2 ta ish

Ish: Thermodynamic determination of optimal conditions for growing Si1-xGex crystals from a tin solution on a silicon substrate

1. Growing Si–Si 1− x Ge x –(Ge 2 ) 1− y (GaAs) y structures in a single technological cycle

   Alijon S. Razzokov, С.И. Петрушенко, Mateusz Fijałkowski +1

   MaqolaOAOchiq kirish20260 iqtibos

   ABIABI:AkademIndex/2026.article.093420

2. Quantum Chemical Calculations of Nanoclusters in Si 1‐x Ge x and (Si 2 ) 1‐x (GaP) x Solid Solutions and Their Influence on Epitaxial Growth

   Alijon Razzokov, Khushnudbek Eshchanov, Risolat Esomurodova

   Maqola20260 iqtibos

   ABIABI:AkademIndex/2026.article.094136