Influence of the varizonal Si<sub>1-x</sub>Ge<sub>x</sub> solid solution composition on the thermovoltaic effect in n – Si – p – Si<sub>(1-x)</sub>Ge<sub>x</sub> structure
A.S. SaidovPhysical-Technical Institute of the Uzbekistan Academy of Sciences, 2 B, Chingiz Aitmatov str., Tashkent, 100084, UzbekistanSh. N. UsmonovPhysical-Technical Institute of the Uzbekistan Academy of Sciences, 2 B, Chingiz Aitmatov str., Tashkent, 100084, UzbekistanA B KarshievPhysical-Technical Institute of the Uzbekistan Academy of Sciences, 2 B, Chingiz Aitmatov str., Tashkent, 100084, UzbekistanJ M AbdievPhysical-Technical Institute of the Uzbekistan Academy of Sciences, 2 B, Chingiz Aitmatov str., Tashkent, 100084, Uzbekistan
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ABI
Annotatsiya
Abstract The dependence of the thermogenerated electromotive force and current in a varizonal continuous Si 1- x Ge x (0 ≤ x ≤ 1) solid solution on the content of germanium in it under uniform heating has been studied. The samples were the heterostructures of the n − Si − p − Si 1− x Ge x (0 ≤ x ≤ 1) type base obtained by the liquid-phase epitaxy. In the temperature range 30-250°C with homogeneous heating in the heterostructures, an electromotive force of 0.3 mV and a current of 3.5 nA were generated, and after carrying out the oblique strip of the epitaxial film, the heterostructures generated - the electromotive force 1.6 mV & current 16 nA.
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