Ushbu ish iqtibos qilgan ishlar

4 ta ish

Ish: Development of technology for creating high-voltage p0–n0 junctions based on GaAs

1. Space-charge-induced negative resistance in avalanche diodes

   H.C. Bowers

   Maqola19682 iqtibos

   ABIABI:AkademIndex/2026.other.516461

2. The relative current change, concentration, and carrier mobility in silicon samples doped nickel and at pulse hydrostatic pressure

   О. О. Маматкаримов, Р. Х. Хамидов, A. A. Abdukarimov

   MaqolaElectromagnetic Effects on MaterialsMaterials Today Proceedings20191 iqtibos

   ABIABI:AkademIndex/2019.article.000617

3. Peculiarities of influence of radiation defects on photoconductivity of silicon irradiated by fast neutrons

   M. Karimov, Sh. Makhkamov, Sh. A. Makhmudov +6

   MaqolaSilicon and Solar Cell TechnologiesApplied Solar Energy20101 iqtibos

   ABIABI:AkademIndex/2026.other.584392

4. Sarlavhasiz

   Boshqa1 iqtibos

   ABIABI:AkademIndex/2026.other.584393