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13 ta ish

Ish: Effect of Be Co-Doping on Anisotropy of Magnetoresistance in GaMnAs Epitaxial Layers

  1. Physics of Semiconductor Devices

    Samarth Jain, S. Radhakrishna

    Maqola198715 iqtibos
    ABI

  2. Magnetic anisotropy investigations of (Ga,Mn)As with a large epitaxial strain

    Piotr Juszyński, Marta Gryglas-Borysiewicz, Jacek Szczytko +4

    Maqola20154 iqtibos
    ABI

  3. Metal–insulator transition and magnetotransport in III–V compound diluted magnetic semiconductors

    Y. Iye, A. Oiwa, Akira Endo +5

    Maqola19994 iqtibos
    ABI

  4. Anisotropy of Negative Magnetoresistance in GaMnAs Epitaxial Layers

    A. S. Gazizulina, Aslan Nasirov, A. A. Nebesniy +2

    MaqolaZnO doping and propertiesSemiconductors20213 iqtibos
    ABI

  5. Uniaxial in-plane magnetic anisotropy of Ga1−xMnxAs

    U. Welp, V. K. Vlasko‐Vlasov, Andreas Menzel +4

    Maqola20043 iqtibos
    ABI

  6. Effects of film thickness and annealing on the magnetic properties of GaMnAsP ferromagnetic semiconductor

    Jihoon Chang, Seonghoon Choi, Kyung Jae Lee +7

    Maqola20193 iqtibos
    ABI

  7. Temperature-induced transition of magnetic anisotropy between in-plane and out-of-plane directions in GaMnAs film

    Sangyeop Lee, Sangyeop Lee, Seonghoon Choi +7

    Maqola20163 iqtibos
    ABI

  8. Sarlavhasiz

    Boshqa2 iqtibos
    ABI

  9. Sarlavhasiz

    Boshqa2 iqtibos
    ABI

  10. Anisotropy of magnetoresistance in Be Co-doped GaMnAs

    P. B. Parchinskiy, Fucheng Yu, P. Sekar +1

    MaqolaZnO doping and propertiesJournal of Magnetism and Magnetic Materials20081 iqtibos
    ABI

  11. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  12. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  13. Sarlavhasiz

    Boshqa1 iqtibos
    ABI