ELECTROPHYSICAL PROPERTIES OF NANOFILMS

Manganese silica thin films of different thicknesses were obtained in a magnetron device under high vacuum conditions. The surface resistance, surface concentration and Hall coefficients of nanosized manganese silicide films obtained by the ion-plasma method were measured on an HMS 5000 device. The Hall coefficient for a 102.3 nm thick film of manganese silicide grown on a silicon surface by the ion-plasma method is 2,8979·10-5 sm3/C.

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