Investigation of the Influence of Technological Factors on High-Voltage p0–n0 Junctions Based on GaAs
A. M. SultanovNamangan Institute of Engineering and Technology, 160115 Namangan, UzbekistanE. K. YusupovNamangan Institute of Engineering and Technology, 160115 Namangan, UzbekistanR. G. RakhimovNamangan Institute of Engineering and Technology, 160115 Namangan, Uzbekistan
ABI
Annotatsiya
Journal of Nano- and Electronic Physics. Scientific journal. ISSN: 2077-6772. Journal abbreviation: J. Nano- Electron. Phys. No page charges. All articles are freely available on-line. Issued 4 times per year. Publisher: Sumy State University. (Sumy, Ukraine)
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