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9 ta ish

Ish: Formation of Binary Compounds of Impurity Atoms of Sulfur and Zinc in Silicon

  1. Nanometer-size atomic clusters in semiconductors—a new approach to tailoring material properties

    M. G. Mil’vidskiĭ, V. V. Chaldyshev

    Maqola199815 iqtibos
    ABI

  2. Silicon with binary elementary cells as a novel class of materials for future photoenergetics

    М. К. Бахадырханов, A. Sh. Mavlyanov, U. Kh. Sodikov +1

    MaqolaSemiconductor materials and interfacesApplied Solar Energy201513 iqtibos
    ABI

  3. Interaction between multiply charged manganese nanoclusters and sulfur atoms in silicon

    Z.M. Saparniyazova, М. К. Бахадырханов, О. Э. Саттаров +4

    MaqolaSemiconductor materials and interfacesInorganic Materials20125 iqtibos
    ABI

  4. Nonisovalent Si-III-V and Si-II-VI alloys: Covalent, ionic, and mixed phases

    Joongoo Kang, Ji‐Sang Park, Pauls Stradins +1

    Maqola20175 iqtibos
    ABI

  5. Silicon with an increased content of monoatomic sulfur centers: Sample fabrication and optical spectroscopy

    Yu. A. Astrov, Stephen A. Lynch, V. B. Shuman +3

    Maqola20133 iqtibos
    ABI

  6. Redistribution of deep selenium and sulfur impurities in silicon upon surface doping with phosphorus

    Yu. A. Astrov, В. А. Козлов, А. N. Lodygin +4

    Maqola20093 iqtibos
    ABI

  7. Sarlavhasiz

    Boshqa2 iqtibos
    ABI

  8. Elaboration of physical fundamentals of nanosized structures on the basis of S++Mn−− and Se++Mn−− molecule formation in silicon lattice

    М. К. Бахадырханов, U. X. Sodikov, Н. Ф. Зикриллаев +1

    MaqolaChalcogenide Semiconductor Thin FilmsSurface Engineering and Applied Electrochemistry20071 iqtibos
    ABI

  9. NUMERICAL CALCULATION OF THE CHARGE STATE AND ELECTROSTATIC POTENTIAL OF A BINARY NANOCLUSTER STRUCTURE WITH SI2ZNS CELLS IN A CUBIC LATTICE OF CRYSTALLINE SILICON WITH A DIAMOND STRUCTURE

    Н. Ф. Зикриллаев, F. K. Shakarov, Maruf Khaqqulov

    Maqola20201 iqtibos
    ABI