Ushbu ishga iqtibos qilgan ishlar

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Ish: Study of radiation-induced effects in GaAs(O):Cr under 2 Mev electron irradiation using Raman, FTIR and Hall effect measurements

1. Electron-irradiation effects on Raman and infrared spectra of Te-doped n- and p-type silicon

   M.Yu. Tashmetov, Sh. Makhkamov, Sohibjon Egamov +2

   MaqolaSilicon and Solar Cell TechnologiesPhysica B Condensed Matter20261 iqtibos

   ABIABI:AkademIndex/2026.article.006431

2. Radiation-induced defect evolution in GaAs(O):Cr studied by Raman, FTIR and Hall measurements

   M. Yu. Tashmetov, Khabibulla Djangabaev

   Maqola20260 iqtibos

   ABIABI:AkademIndex/2026.article.065700

3. Electron irradiation-induced defect evolution and its impact on the structural and optical properties of GaAs(O):Cr

   M. Yu. Tashmetov, Khabibulla Djangabaev

   Maqola20260 iqtibos

   ABIABI:AkademIndex/2026.article.090622