Maqola

Temperature dependence of dark current in radiation detectors based on p-Si/n-InP heterostructures

Bekjan RadzhapovLaboratory for Growth of Semiconductor Crystals, S.A. Azimov Physical-Technical Institute of Uzbekistan Academy of Sciences, Chingiz Aytmatov 2B, 100084, Tashkent, UzbekistanAmin SaidovLaboratory for Growth of Semiconductor Crystals, S.A. Azimov Physical-Technical Institute of Uzbekistan Academy of Sciences, Chingiz Aytmatov 2B, 100084, Tashkent, UzbekistanSali RadzhapovLaboratory for High Energy Physics, S.A. Azimov Physical-Technical Institute of Uzbekistan Academy of Sciences, Chingiz Aytmatov 2B, 100084, Tashkent, UzbekistanShukrullo UsmonovLaboratory for Growth of Semiconductor Crystals, S.A. Azimov Physical-Technical Institute of Uzbekistan Academy of Sciences, Chingiz Aytmatov 2B, 100084, Tashkent, UzbekistanKhimmatali JuraevPhysics and Chemistry Department, TIIAME National Research University, Tashkent, UzbekistanMikhail DolgopolovSamara State Technical University, Samara, Russia

2026en

Ochiq kirish: yoʻq

ABI

Annotatsiya

Annotatsiya mavjud emas.

Identifikatorlar

DOI: 10.1007/s41605-026-00747-5

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