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23 ta ish

Ish: Temperature dependence of dark current in radiation detectors based on p-Si/n-InP heterostructures

  1. Physics of Semiconductor Devices

    Simon M. Sze, Kwok K. Ng

    Kitob200644 iqtibos
    ABI

  2. Silicon radiation detectors (Review)

    Yu.K. Akimov

    Maqola20076 iqtibos
    ABI

  3. Development of a Large-Sized Highly Sensitive Detector Based on α-Si–p-i-n Heterostructures for Radonometers

    Р. А. Муминов, S. A. Radzhapov, F. G. Mullagalieva +2

    MaqolaAdvanced Semiconductor Detectors and MaterialsAtomic Energy20225 iqtibos
    ABI

  4. Development of High-Efficiency Silicon Detectors and Electronic Components for a Radiometer of Alpha Radiation

    Р. А. Муминов, S. A. Radzhapov, F. G. Mullagalieva +4

    MaqolaAdvanced Semiconductor Detectors and MaterialsInstruments and Experimental Techniques20213 iqtibos
    ABI

  5. Sarlavhasiz

    Boshqa3 iqtibos
    ABI

  6. Compound semiconductor radiation detectors

    Alan Owens, A. Peacock

    Maqola20043 iqtibos
    ABI

  7. The development of semiconductor detectors for radiometers of alpha-radiation and the examination of the volumetric activity of radon in various areas

    B. S. Radzhapov, S. A. Radzhapov, F. G. Mullagalieva +1

    MaqolaAdvanced Semiconductor Detectors and MaterialsRadiation Detection Technology and Methods20232 iqtibos
    ABI

  8. In Situ Mapping of Space Charge Region Activation Dynamics in SiC/Si-Based Heterostructures by KPFM/STS: Role of Interface State Recharging

    M. V. Dolgopolov, N. A. Ivliev, V. V. Radenko +3

    MaqolaSilicon Carbide Semiconductor TechnologiesPhysics of Particles and Nuclei Letters20262 iqtibos
    ABI

  9. Sarlavhasiz

    Boshqa2 iqtibos
    ABI

  10. Sarlavhasiz

    Boshqa2 iqtibos
    ABI

  11. Sarlavhasiz

    Boshqa2 iqtibos
    ABI

  12. Sarlavhasiz

    Boshqa2 iqtibos
    ABI

  13. Sarlavhasiz

    Boshqa2 iqtibos
    ABI

  14. Sarlavhasiz

    Boshqa2 iqtibos
    ABI

  15. Development and investigation of the electrophysical and spectrometric characteristics of a <i>p</i> -Si/ <i>n</i> -InP heterostructure radiation detector

    A.S. Saidov, S. A. Radzhapov, Shukrullo Usmonov +3

    MaqolaOchiq kirishRadiation Effects in ElectronicsOxford Open Materials Science20261 iqtibos
    ABI

  16. Temperature-dependent dark I–V transport and barrier inhomogeneity in VTE-grown CdTe/Si heterojunction

    I.B. Sapaev, S.O. Sadullaev, Kh. N. Juraev +4

    MaqolaOchiq kirishSemiconductor materials and interfacesResults in Physics20261 iqtibos
    ABI

  17. Sarlavhasiz

    BoshqaOchiq kirish1 iqtibos
    ABI

  18. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  19. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  20. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  21. Sarlavhasiz

    BoshqaOchiq kirish1 iqtibos
    ABI

  22. Sarlavhasiz

    Boshqa1 iqtibos
    ABI

  23. Sarlavhasiz

    BoshqaOchiq kirish1 iqtibos
    ABI