ab initio study of oxygen vacancy effects on structural, electronic and thermoelectric behavior of AZr1-xMxO3 (A = Ba, Ca, Sr; M= Al, Cu, x = 0.25) for application of memory devices
Ejaz Ahmad KheraDepartment of Physics,The Islamia University of Bahawalpur, PakistanHafeez UllahDepartment of Physics,The Islamia University of Bahawalpur, PakistanMuhammad ImranDepartment of Physics, Govt. College University Faisalabad, 38000, PakistanNiaz Ahmad NiazMaterials Simulation Research Laboratory (MSRL), Department of Physics, Bahauddin Zakariya University Multan Pakistan, 60800, PakistanFayyaz HussainMaterials Simulation Research Laboratory (MSRL), Department of Physics, Bahauddin Zakariya University Multan Pakistan, 60800, Pakistan. Electronic address: [email protected]R.M. Arif KhalilMaterials Simulation Research Laboratory (MSRL), Department of Physics, Bahauddin Zakariya University Multan Pakistan, 60800, Pakistan. Electronic address: [email protected]Umbreen ResheedMaterials Simulation Research Laboratory (MSRL), Department of Physics, Bahauddin Zakariya University Multan Pakistan, 60800, PakistanAnwar Manzoor RanaMaterials Simulation Research Laboratory (MSRL), Department of Physics, Bahauddin Zakariya University Multan Pakistan, 60800, Pakistan. Electronic address: [email protected]Muhammad Iqbal HussainDepartment of Physics,University of Education, Lahore, 54000, PakistanChandreswar MahataSchool of Electronics Engineering, Chungbuk National University, Cheongju, 28644, Republic of KoreaSungjun KimDivision of Electronics and Electrical Engineering, Dongguk University, Seoul, 04620, Republic of Korea
2020en
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ABI
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