Sungjun Kim

4 ta ish

Sejong University

1. ab initio study of oxygen vacancy effects on structural, electronic and thermoelectric behavior of AZr1-xMxO3 (A = Ba, Ca, Sr; M= Al, Cu, x = 0.25) for application of memory devices

   Ejaz Ahmad Khera, Hafeez Ullah, Muhammad Imran +8

   Maqola20203 iqtibos

   ABIABI:AkademIndex/2026.other.080682

2. Structural, electronic and optical properties of transition metal doped Hf1-xTMxO2 (TM = Co, Ni and Zn) using modified TB-mBJ potential for optoelectronic memristors devices

   Ejaz Ahmad Khera, Hafeez Ullah, Muhammad Imran +9

   Maqola20202 iqtibos

   ABIABI:AkademIndex/2026.other.080679

3. Realization of future neuro-biological architecture in power efficient memristors of Fe3O4/WS2 hybrid nanocomposites

   Faisal Ghafoor, Muhammad Ismail, Honggyun Kim +9

   Maqola20242 iqtibos

   ABIABI:AkademIndex/2026.other.084255

4. Resistive switching and synaptic properties modifications in gallium-doped zinc oxide memristive devices

   Shilpa S. More, Pratiksha A. Patil, Kalyani D. Kadam +9

   MaqolaOAOchiq kirish20192 iqtibos

   ABIABI:AkademIndex/2026.other.106108