Applying low-energy ion implantation in the creation of nanocontacts on the surface of ultrathin semiconductor films
D. M. MuradkabilovAbu Rayhan al-Biruni Tashkent State Technical University, Tashkent, 100095, UzbekistanД. А. ТашмухамедоваAbu Rayhan al-Biruni Tashkent State Technical University, Tashkent, 100095, UzbekistanБ. Е. УмирзаковAbu Rayhan al-Biruni Tashkent State Technical University, Tashkent, 100095, Uzbekistan
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ABI
Annotatsiya
A new way for obtaining nanocontacts on the surface of semiconductors using Si (111) thin films as an example is proposed. The essence of the method lies in the fact that, first, cobalt-silicide nanofilms with a thickness of 45–50 Å are formed by ion implantation in combination with annealing; then, atoms of the contact metal (Al) are sputtered. The specific resistance of the CoSi2 nanofilms is (2–3) × 10−5 Ω × cm.
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