D. M. Muradkabilov

3 ta ish

Islom Karimov nomidagi Toshkent davlat texnika universiteti

1. Electron spectroscopy of the nanostructures created in Si, GaAs, and CaF2 surface layers using low-energy ion implantation

   Б. Е. Умирзаков, Д. А. Ташмухамедова, D. M. Muradkabilov +1

   MaqolaSemiconductor materials and interfacesTechnical Physics201320 iqtibos

   ABIABI:AkademIndex/2026.other.253376

2. Applying low-energy ion implantation in the creation of nanocontacts on the surface of ultrathin semiconductor films

   D. M. Muradkabilov, Д. А. Ташмухамедова, Б. Е. Умирзаков

   MaqolaIon-surface interactions and analysisJournal of Surface Investigation X-ray Synchrotron and Neutron Techniques201314 iqtibos

   ABIABI:AkademIndex/2026.other.201147

3. Effect of the Disordering of Thin Surface Layers on the Electronic and Optical Properties of Si(111)

   Б. Е. Умирзаков, Д. А. Ташмухамедова, A. K. Tashatov +2

   MaqolaSemiconductor materials and interfacesSemiconductors20204 iqtibos

   ABIABI:AkademIndex/2026.other.402217