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8 ta ish

Ish: Williamson-Hall analysis in estimation of lattice strain in nanometer-sized ZnO particles

  1. Effect of SiO<sub>2</sub> and Post-Annealed Ga<sub>2</sub>O<sub>3</sub> Buffer Layers on Ga<sub>2</sub>O<sub>3</sub> Thin Film Growth and Properties

    Noiba U. Botirova, Azamat O. Arslanov, Gofur B. Eshonkulov +4

    MaqolaGa2O3 and related materialsCrystal Growth & Design20254 iqtibos
    ABI

  2. Structural, morphological, optical, and electrical properties of SbxSey films with different compositions grown by Chemical-molecular beam deposition method from Separate Sb and Se precursors

    T.M. Razykov, K.M. Kouchkarov, B. A. Ergashev +3

    MaqolaOchiq kirishChalcogenide Semiconductor Thin FilmsJournal of Materials Science Materials in Electronics20252 iqtibos
    ABI

  3. Physical properties of SbxSey thin films grown by the vapor transport deposition with independent source

    Т.М. Разыков, К.М. Кучкаров, V.F. Gremenok +7

    MaqolaChalcogenide Semiconductor Thin FilmsSolar Energy20262 iqtibos
    ABI

  4. Effects of La3+ doping on the structural, vibrational, elemental, and dielectric characteristics of Sr-Ba-Zr2 R-type hexaferrite

    Iqra Manzoor, Muhammad Irfan, Raqiqa Tur Rasool +8

    MaqolaMagnetic Properties and Synthesis of FerritesCeramics International20240 iqtibos
    ABI

  5. INFLUENCE OF PLASMA LIQUID-PHASE ALLOYING ON THE PHYSICAL AND MECHANICAL PROPERTIES OF TUNGSTEN ALLOYS

    Azamat Ryskulov, Bauyrzhan Amanzhulov, И. А. Иванов +7

    MaqolaOchiq kirish20240 iqtibos
    ABI

  6. Structural, morphological, optical and electrical characteristics of Sb2Se3 thin films with various Sn doping levels prepared via the chemical molecular beam deposition method

    T. M. Razykov, K.M. Kouchkarov, B. A. Ergashev +5

    Maqola20260 iqtibos
    ABI

  7. Effect of annealing duration on lattice relaxation and electrical properties of sol-gel β-Ga2O3 thin films

    Noiba U. Botirova, Sh. U. Yuldashev, Andrey Nebesniy +4

    Maqola20260 iqtibos
    ABI

  8. Structural characterization and dark current–voltage analysis of FTO/CdS/Sb2Se3 with SnCl2 surface treatment of the Sb2Se3 absorber

    R. T. Yuldoshov, Abdurashid Mavlanov, К. M. Kuchkarov +7

    Maqola20260 iqtibos
    ABI