Ushbu ish iqtibos qilgan ishlar

2 ta ish

Ish: Preparation and Morphological Studies of Epitaxial Layers of a Solid Solution Si1–xGex

1. Direct-bandgap emission from hexagonal Ge and SiGe alloys

   Elham Fadaly, Alain Dijkstra, Jens Renè Suckert +17

   Maqola20206 iqtibos

   ABIABI:AkademIndex/2026.other.278128

2. Impact of SiGe layer thickness in starting substrates on strained Ge-on-insulator pMOSFETs fabricated by Ge condensation method

   Kwang-Won Jo, Wu-Kang Kim, Mitsuru Takenaka +1

   Maqola20194 iqtibos

   ABIABI:AkademIndex/2026.other.278127