Ushbu ishga iqtibos qilgan ishlar

1 ta ish

Ish: Growth of cubic GaN by molecular-beam epitaxy on porous GaAs substrates

1. Unstrained epitaxial InxGa1−xAs films obtained on porous GaAs

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   MaqolaSilicon Nanostructures and PhotoluminescenceTechnical Physics Letters19990 iqtibos

   ABIABI:AkademIndex/1999.article.000035