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Influence of X-Ray Radiation on Some Parameters of p-n Junctions in Silicon

O. A. KlimkovaNuclear Physics Institute, Academy of Sciences of the Uzbek SSR, Tashkent, UzbekistanO. R. NiyazovaNuclear Physics Institute, Academy of Sciences of the Uzbek SSR, Tashkent, Uzbekistan

1971en

ABI

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Annotatsiya mavjud emas.

Mavzular

Pulsed Power Technology Applications Semiconductor materials and interfaces Silicon Carbide Semiconductor Technologies

Identifikatorlar

DOI: 10.1007/978-1-4757-1232-2_62

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