O. A. Klimkova

3 ta ish

Institute of Nuclear Physics, Academy of Sciences of the Usbek SSR, Tashkent

1. Low-temperature lithium drift in silicon

   O. A. Klimkova, O. R. Niyazova

   MaqolaSilicon and Solar Cell Technologiesphysica status solidi (a)19701 iqtibos

   ABIABI:AkademIndex/openalex/1970.article.000007

2. Influence of X-Ray Radiation on Some Parameters of p-n Junctions in Silicon

   O. A. Klimkova, O. R. Niyazova

   BobPulsed Power Technology Applications19710 iqtibos

   ABIABI:AkademIndex/openalex/1971.chapter.000001

3. Radiation-enhanced diffusion - defect production ratio in γ-irradiated silicon detectors

   M. M. Zhits, O. A. Klimkova, O. R. Niyazova +1

   MaqolaSilicon and Solar Cell Technologiesphysica status solidi (a)19720 iqtibos

   ABIABI:AkademIndex/openalex/1972.article.000016